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ES6U41

Part Number	ES6U41
Manufacturer	Rohm
Description	2.5V Drive Nch+SBD MOSFET
Published	Nov 5, 2015
Detailed Description	2.5V Drive Nch+SBD MOSFET ES6U41 Structure Silicon N-channel MOSFET / Schottky barrier diode Features 1) Nch MOSFET ...
Datasheet	ES6U41 PDF File

Overview

2.
5V Drive Nch+SBD MOSFET ES6U41 Structure Silicon N-channel MOSFET / Schottky barrier diode Features 1) Nch MOSFET and schottky barrier diode- are put in WEMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.
5V drive).
4) Built-in Low VF schottky barrier diode.
Applications Switching Package specifications Package Type Code Basic ordering unit (pieces) ES6U41 Taping T2R 8000 Absolute maximum ratings (Ta=25C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP ∗1 IS ISP ∗1 Channel temperature Power dissipation Tch PD ∗2 ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board Limits 30 ±12 ±1.
5 ±6.
0 0.
75 6.
0 150 0.
7 Unit V V A A A A °C W / ELEMENT Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation ∗1 60Hz 1cycle ∗2 Mounted on ceramic board Symbol VRM VR IF IFSM ∗1 Tj PD ∗2 Limits 25 20 0.
5 2.
0 150 0.
5 Unit V V A A °C W / ELEMENT Parameter Power dissipation Range of storage temperature ∗ Mounted on a ceramic board Symbol PD ∗ Tstg Limits 0.
8 −55 to +150 Unit W / TOTAL °C Dimensions (Unit : mm) WEMT6 SOT-563T (6) (5) (4) (1) (2) (3) Abbreviated symbol : U41 Inner circuit (6) (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (1)Gate (2)Source (3)Anode (3) (4)Cathode (5)Drain (6)Drain www.
rohm.
com ○c 2012 ROHM Co.
, Ltd.
All rights reserved.
1/4 2012.
02 - Rev.
B ES6U41 Electrical characteristics Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance RDS (on)∗ Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Tot...

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