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ES6U42

Part Number	ES6U42
Manufacturer	Rohm
Description	2.5V Drive Pch+SBD MOSFET
Published	Nov 5, 2015
Detailed Description	2.5V Drive Pch+SBD MOSFET ES6U42 zStructure Silicon P-channel MOSFET / Schottky barrier diode zFeatures 1) Pch MOSFET a...
Datasheet	ES6U42 PDF File

Overview

2.
5V Drive Pch+SBD MOSFET ES6U42 zStructure Silicon P-channel MOSFET / Schottky barrier diode zFeatures 1) Pch MOSFET and schottky barrier diode are put in WEMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.
5V drive).
4) Built-in Low VF schottky barrier diode.
zApplications Switching zDimensions (Unit : mm) WEMT6 SOT-563T (6) (5) (4) (1) (2) (3) Abbreviated symbol : U42 zPackage specifications Type ES6U42 Package Code Basic ordering unit (pieces) Taping T2R 8000 zInner circuit (6) (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (1)Gate (2)Source (3)Anode (3) (4)Cathode (5)Drain (6)Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP ∗1 IS ISP ∗1 Channel temperature Power dissipation Tch PD ∗2 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation ∗1 60Hz 1cycle ∗2 Mounted on a ceramic board Symbol VRM VR IF IFSM ∗1 Tj PD ∗2 Limits −20 ±12 ±1.
0 ±4.
0 −0.
4 −4.
0 150 0.
7 Limits 25 20 0.
5 2.
0 150 0.
5 Unit V V A A A A °C W / ELEMENT Unit V V A A °C W / ELEMENT Parameter Power dissipation Range of storage temperature ∗ Mounted on a ceramic board Symbol PD ∗ Tstg Limits 0.
8 −55 to +150 Unit W / TOTAL °C www.
rohm.
com ○c 2009 ROHM Co.
, Ltd.
All rights reserved.
1/5 2009.
01 - Rev.
A ES6U42 zElectrical characteristics (Ta=25°C) Parameter Symbol Min.
Gate-source leakage IGSS − Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −0.
7 Static drain-source on-state resistance RDS (on)∗ − − − Forward transfer admittance Yfs ∗ 0.
7 Input capacitance Ciss − Output capacitance Coss − Reverse transfer capacitan...

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