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2N7002K

AUK
Part Number 2N7002K
Manufacturer AUK
Description N-channel MOSFET
Published Nov 25, 2015
Detailed Description 2N7002K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 1000V (HBM)  Low On...
Datasheet PDF File 2N7002K PDF File

2N7002K
2N7002K

Overview
2N7002K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 1000V (HBM)  Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V  High power and current handling capability  Very fast switching  RoHS compliant device Applications  High speed line driver SOT-23 Ordering Information Part Number Marking Code Package Packaging 2N7002K 7K2 □ SOT-23 Tape & Reel Marking Information 7K2 □ 7K2 = Specific Device Code □ = Year & Week Code Marking Absolute Maximum Ratings (Tamb=25℃, Unless otherwise specified) Characteristic Symbol Drain-Source voltage Gate-Source voltage Maximum drain current (Note 1) Pulsed drain current (Note 1) Power dissipation (Note 2) Operating junction temperature Storage temperature range Thermal resistance junction to ambient (Note 2) VDS VGS ID IDP PD Tj Tstg Rth(j-a) Note 1) Limited only maximum junction temperature Note 2) Device mounted on FR-4 board with recommended pad layout.
Rev.
date: 24-AUG-11 KSD-T5C097-000 Ratings 60 20 300 800 350 150 -55 ~ 150 350 Unit V V mA mA mW C C C/W www.
auk.
co.
kr 1 of 6 Electrical Characteristics (Tamb=25℃, Unless otherwise specified) Characteristic Symbol Test Condition Drian-Source breakdown voltage Gate-Source breakdown voltage Gate-Threshold voltage BVDSS BVGSS VGS(th) ID=250A, VGS=0 IG=250A, VDS=0 ID=250uA, VDS=VGS Zero Gate voltage drain current IDSS VDS=60V, VGS=0 Gate-body leakage Drain-Source on-resistance (Note 3) Forward trans-conductance (Note 3) IGSS RDS(ON) gfs VGS=5V, VDS=0V VGS=10V, VDS=0V VGS=20V, VDS=0V VGS=10V, ID=0.
5A VGS=5V, ID=0.
05A VDS=10V, ID=0.
2A Input capacitance Output capacitance Reverse Transfer capacitance Turn-on delay time (Note 3, 4) Rise time (Note 3, 4) Turn-off delay time (Note 3, 4) Fall time (Note 3, 4) Total gate charge (Note 3, 4) Gate-Source charge (Note 3, 4) Gate-Drain charge (Note 3, 4) Diode forward voltage (Note 3) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=25V, VGS=0, f=1MHz VD...


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