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C5147

FGX
Part Number C5147
Manufacturer FGX
Description NPN silicon Transistor
Published Mar 27, 2016
Detailed Description ■■APPLICATION：FREQUENCY AMPLIFIER APPLICATION, C5147 —NPN silicon — ■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER SYMBOLRATING...
Datasheet PDF File C5147 PDF File

C5147
C5147

Overview
■■APPLICATION：FREQUENCY AMPLIFIER APPLICATION, C5147 —NPN silicon — ■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER SYMBOLRATING UNIT Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation (Ta=25℃) Collector Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature Range VCBO 300 V VCEO 300 V VEBO 5V IC 100 mA PC 2 W PC 10 W TJ 150 ℃ Tstg ﹣55~150 ℃ 1 TO-220 1.
Base 2.
Collector 3.
Emitter ■■ ELECTRICAL CHARACTERISTICS （Ta=25℃） PARAMETER SYMBOL MIN.
TYP.
MAX.
UNIT TEST CONDITION DC Current Gain hFE 60 200 VCE=10 V，Ic=10 mA Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Gain bandwidth product Common Base Output Capacitance ICBO IEBO BVCBO BVCEO BVEBO VCE(sat) fT Cob 0.
5 µA VCB= 200V，IE=0 0.
5 µA VEB= 4V，Ic=0 300 V Ic= 0.
05mA，IE=0 300 V Ic=0.
1 mA，IB=0 5 V IE=0.
05 mA，Ic=0 0.
2 1 V Ic=50 mA，IB= 5mA 50 100 MHz VCE= 30V，IE=-20 mA，f=30MHz 3 PF VCB= 30V, IE=0, f = 1MHz ■■hFE Classification And Marking Print Mark C5147 Classification D hFE 100-150 E 150-200 ...


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