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BAS316

Taiwan Semiconductor
Part Number BAS316
Manufacturer Taiwan Semiconductor
Description 200mW High Voltage SMD Switching Diode
Published Apr 24, 2016
Detailed Description Small Signal Product BAS316 Taiwan Semiconductor 200mW High Voltage SMD Switching Diode FEATURES - Fast switching devi...
Datasheet PDF File BAS316 PDF File

BAS316
BAS316

Overview
Small Signal Product BAS316 Taiwan Semiconductor 200mW High Voltage SMD Switching Diode FEATURES - Fast switching device (trr<4.
0ns) - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) MECHANICAL DATA - Case: Bend lead SOD-323 small outline plastic package - Terminal: Matte tin plated, lead free.
, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Polarity: Indicated by cathode band - Weight: 4.
85 ± 0.
5 mg - Marking Code: A6 SOD-323 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER Power dissipation Mean forward current Non-repetitive peak forward current Pulse Width = 1 μsec Pulse Width = 1 msec SYMBOL PD IO IFRM VALUE 200 250 4.
0 1.
0 Junction and storage temperature range TJ , TSTG -65 to + 150 PARAMETER Reverse Breakdown Voltage Forward Voltage Reverse Leakage Voltage Junction Capacitance Reverse Recovery Time IR = 100 μA IF = 1.
0 mA IF = 10 mA IF = 50 mA IF = 150 mA VR = 75 V VR = 25 V VR = 0 , f = 1.
0 MHz IF = IR = 10 mA , RL = 100 Ω SYMBOL V(BR) VF IR CJ trr MIN 100 - MAX - 0.
715 0.
855 1.
000 1.
250 1.
00 0.
03 1.
5 4 UNITS mW mA A oC UNITS V V μA pF ns Document Number: DS_S1311003 Version: C14 Small Signal Product BAS316 Taiwan Semiconductor Power Dissipation (mW) Instantaneous Forward Current (mA) RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Fig.
1 Typical Forward Characteristics 10 1 0.
1 0.
01 0.
001 0.
0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 1.
4 1.
6 Instantaneous Forward Voltage (V) Fig.
3 Admissible Power Dissipation Curve 250 200 150 100 50 0 0 25 50 75 100 125 150 175 Ambient Temperature (°C) Reverse Current (uA) Junction Capacitance (pF) Fig.
2 Reverse Current VS.
Reverse Voltage 100 10 1 0.
1 0.
01 0 20 40 60 80 100 120 Reverse Voltage (V) Fig.
4 Typical Junction Capacitance 1.
5 1.
2 0.
9 ...


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