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2SC5890 Datasheet, Equivalent, RF Transistor.Silicon NPN RF Transistor Silicon NPN RF Transistor |
| Part | 2SC5890 |
|---|---|
| Description | Silicon NPN RF Transistor |
| Feature | isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC5890
DESCRIPTION ·High Gain Bandwidth Product
fT = 7. 8 GHz TYP. ·High power gain and low noise figure ; PG = 12 dB TYP. , NF = 1. 0 dB typ. @ f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF ~ VHF wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 1. 5 V IC Collector Current-Continuous PC C. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SC5890 |
|---|---|
| Description | Silicon NPN RF Transistor |
| Feature | isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC5890
DESCRIPTION ·High Gain Bandwidth Product
fT = 7. 8 GHz TYP. ·High power gain and low noise figure ; PG = 12 dB TYP. , NF = 1. 0 dB typ. @ f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF ~ VHF wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 1. 5 V IC Collector Current-Continuous PC C. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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