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2N7000A

KEC
Part Number 2N7000A
Manufacturer KEC
Description MOSFET
Published Jun 20, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Vol...
Datasheet PDF File 2N7000A PDF File

2N7000A
2N7000A

Overview
SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION.
FEATURES High density cell design for low RDS(ON).
Voltage controolled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Drain-Source Voltage Drain-Gate Voltage (RGS 1 ) Gate-Source Voltage Drain Current Continuous Pulsed Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VDSS VDGR VGSS ID IDP PD Tj Tstg RATING 60 60 20 200 500 400 150 -55 150 UNIT V V V mA mW L M C 2N7000A N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.
70 MAX B 4.
80 MAX C 3.
70 MAX D 0.
45 E 1.
00 F 1.
27 ...


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