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BUW76

Part Number	BUW76
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Sep 2, 2016
Detailed Description	isc Silicon NPN Power Transistor BUW76 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) ·Hig...
Datasheet	BUW76 PDF File

Overview

isc Silicon NPN Power Transistor BUW76 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.
) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended in fast switching applications for high output powers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 750 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 17 A IB Base Current-Continuous 5 A IBM Base Current-Peak PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 7 A 120 W 17...

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