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MTB080P06N3

Cystech Electonics
Part Number MTB080P06N3
Manufacturer Cystech Electonics
Description P-Channel Enhancement Mode Power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 1/ 9 P-Channel Enhance...
Datasheet PDF File MTB080P06N3 PDF File

MTB080P06N3
MTB080P06N3

Overview
CYStech Electronics Corp.
Spec.
No.
: C069N3 Issued Date : 2016.
03.
24 Revised Date : Page No.
: 1/ 9 P-Channel Enhancement Mode MOSFET MTB080P06N3 BVDSS ID@VGS=-10V, TA=25°C RDSON(TYP) VGS=-10V, ID=-2A VGS=-4.
5V, ID=-1.
7A -60V -2.
5A 80mΩ 109mΩ Features •Advanced trench process technology •High density cell design for ultra low on resistance •Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTB080P06N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS comp...


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