NPT2010
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package High Drain Efficiency (>60%)
Applications
Defense Communications Land Mobile Radio Avionics Wi...
