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MJD122

Silicon NPN Darlington Power Transistor

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Monolithic Construction With Built-in Base-Emitter Shunt Resistors ·Complementary Pairs Simplifies Designs ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f...

Inchange Semiconductor

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