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MJD340

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD340 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA ·DPAK for Surface Mount Applications ·Complement to Typ MJD350 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP...

Inchange Semiconductor

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