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MJD50

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Silicon NPN Power Transistor


Description
isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,switchmode power supply...



Inchange Semiconductor

MJD50

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