MOSFET. FDN8601 Datasheet

FDN8601 Datasheet PDF, Equivalent


Part Number

FDN8601

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDN8601 Datasheet PDF


FDN8601 Datasheet
FDN8601
N-Channel PowerTrench® MOSFET
100 V, 2.7 A, 109 m:
July 2010
Features
General Description
„ Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A
„ Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Fast switching speed
„ 100% UIL tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
Applications
„ Primary DC-DC Switch
„ Load Switch
„ RoHS Compliant
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
100
±20
2.7
12
13
1.5
0.6
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
75
80
°C/W
Device Marking
8601
Device
FDN8601
Package
SSOT-3
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDN8601 Rev. C
1
www.fairchildsemi.com

FDN8601 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 PA, VGS = 0 V
ID = 250 PA, referenced to 25 °C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
100
V
68 mV/°C
1
±100
PA
nA
On Characteristics (Note 2)
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 PA
ID = 250 PA, referenced to 25 °C
VGS = 10 V, ID = 1.5 A
VGS = 6 V, ID = 1.2 A
VGS = 10 V, ID = 1.5 A, TJ = 125 °C
VDS = 10 V, ID = 1.5 A
2.0
3.0
-8
85.4
117
143
8
4.0 V
mV/°C
109
175 m:
183
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
156 210
47 65
2.7 5
1.0
pF
pF
pF
:
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 1.5 A,
VGS = 10 V, RGEN = 6 :
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 50 V,
ID = 1.5 A
4.3 10
ns
1.3 10 ns
7.8 16 ns
3.4 10 ns
3 5 nC
1.8 3 nC
0.9 nC
0.8 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 1.5 A (Note 2)
0.81 1.3
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 1.5 A, di/dt = 100 A/Ps
29 46 ns
15 27 nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 80 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 180 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V.
©2010 Fairchild Semiconductor Corporation
FDN8601 Rev. C
2
www.fairchildsemi.com


Features Datasheet pdf FDN8601 N-Channel PowerTrench® MOSFET FDN8601 N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 109 m: July 2010 Featur es General Description „ Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A „ Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A „ High performance trench techn ology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL tes ted This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advan ced Power Trench® process that has bee n optimized for rDS(on), switching perf ormance and ruggedness. Applications „ Primary DC-DC Switch „ Load Switch RoHS Compliant MOSFET Maximum Rating s TA = 25 °C unless otherwise noted S ymbol VDS VGS ID EAS PD TJ, TSTG Param eter Drain to Source Voltage Gate to So urce Voltage -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipati on Power Dissipation Operating and Stor age Junction Temperature Range Thermal Characteristics (Note .
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