Mode MOSFET. P1203ED Datasheet

P1203ED Datasheet PDF, Equivalent


Part Number

P1203ED

Description

P-Channel Enhancement Mode MOSFET

Manufacture

UNIKC

Total Page 5 Pages
PDF Download
Download P1203ED Datasheet


P1203ED Datasheet
P1203ED
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
12mΩ @VGS = -10V
ID
-52A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-52
-33
-150
Avalanche Current
Avalanche Energy2
L = 0.1mH
IAS
EAS
-44
97
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
49
19
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2VDD=-15V.Starting TJ=25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.55
50
UNITS
°C / W
Ver 1.1
1 2013-3-19

P1203ED Datasheet
P1203ED
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±25V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 55 °C
VDS = -5V, VGS = -10V
-30
-1.0 -1.6 -2.5
±100
1
10
-150
Drain-Source On-State
Resistance1
RDS(ON)
VGS = -4.5V, ID = -9A
VGS = -10V, ID = -12A
14 19
8 12
Forward Transconductance1
gfs
VDS = -5V, ID = -12A
26
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = -15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
2840
451
411
3.35
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg VGS=10V
VGS=4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -12A
VDS = -15V, RL=1.25Ω
ID @ 12A, VGS = -10V, RGEN= 6Ω
57
29
8
15
12
8
35
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -12A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -12A, dlF/dt = 100A / mS
28.2
18
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-35
-1.2
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-19


Features Datasheet pdf P1203ED P-Channel Enhancement Mode MOSFE T PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12mΩ @VGS = -10V ID -52A TO-25 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/T EST CONDITIONS SYMBOL LIMITS Drain-S ource Voltage VDS -30 Gate-Source Vol tage VGS ±25 Continuous Drain Curren t Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -52 -33 -150 Avala nche Current Avalanche Energy2 L = 0.1 mH IAS EAS -44 97 Power Dissipation TC = 25 °C TC = 100 °C PD 49 19 J unction & Storage Temperature Range TJ , TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RES ISTANCE Junction-to-Case Junction-to-Am bient 1Pulse width limited by maximum j unction temperature. 2VDD=-15V.Starting TJ=25°C SYMBOL RqJC RqJA TYPICAL M AXIMUM 2.55 50 UNITS °C / W Ver 1.1 1 2013-3-19 P1203ED P-Channel Enhance ment Mode MOSFET ELECTRICAL CHARACTERI STICS (TJ = 25 °C, Unless Otherwise No ted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX S.
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