N-Channel JFT. TF412 Datasheet

TF412 JFT. Datasheet pdf. Equivalent

TF412 Datasheet
Recommendation TF412 Datasheet
Part TF412
Description N-Channel JFT
Feature TF412; Ordering number : EN*A2258 TF412 Advance Information N-Channel JFT 30V, 1.2 to 3.0mA, 5.0mS, SOT-8.
Manufacture ON Semiconductor
Datasheet
Download TF412 Datasheet




ON Semiconductor TF412
Ordering number : EN*A2258
TF412
Advance Information
N-Channel JFT
30V, 1.2 to 3.0mA, 5.0mS, SOT-883
http://onsemi.com
Features
Small IGSS : max 1.0nA (VGS= 20V, VDS=0V)
Small Ciss : typ 4pF (VDS=10V, VGS=0V, f=1MHz)
Ultrasmall package facilitates miniaturization in end products
Halogen free compliance
Applications
Low-Frequency general-purpose amplifier,
impedance conversion, infrared sensor applications
Electrical Connection
3
1 : Source
2 : Drain
3 : Gate
1 2 Top view
Marking
Ordering & Package Information
Device
TF412T5G
Package
SOT-883
(Pb-Free / Halogen Free)
Shipping (Qty / Packing)
8000 / Tape & Reel
31
2
SOT-883
A2 M
M = Date Code
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Storage Temperature
Tstg
Value
30
30
10
10
TBD
50
55 to +150
Unit
V
V
mA
mA
mW
C
C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta 25C, VM = 7.2V
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
V(BR)GDS
IGSS
VGS(off)
IDSS
| yfs |
Ciss
Crss
IG = 10μA, VDS=0V
VGS = 20V, VDS=0V
VDS = 10V, ID = 1μA
VDS = 10V, VGS = 0V
VDS = 10V, VGS=0V, f = 1kHz
VDS = 10V, VGS = 0V, f = 1MHz
min
30
Value
typ
1.18
1.2
3.0
0.60
5.0
4
1.1
max
10
1.5
3.0
Unit
V
nA
V
mA
mS
pF
pF
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Semiconductor Components Industries, LLC, 2013
December, 2013
D1113HK No.A2258-1/3



ON Semiconductor TF412
ID -- VDS
3.0
TF412
3.0
ID -- VDS
2.5
2.0 VGS=0V
1.5 --0.1V
1.0 --0.2V
--0.3V
0.5 --0.4V
0
01234
Drain-to-Source Voltage, VDS -- V
3.5 ID -- VGS
VDS=10V
3.0
5
IT16770
2.5
2.0
1.5
1.0
0.5
0
--1.0
--1.4
--1.2
--0.8
--0.6
--0.4
--0.2
0
Gate-to-Source Voltage, VGS -- V HD 131113
VGS(off) -- IDSS
VDS=10V
ID=1.0μA
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
10
7
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Drain Current, IDSS -- mA
Ciss -- VDS
HD131113
VGS=0V
f=1MHz
5
3
2
1.0
0.1
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain-to-Source Voltage, VDS -- V IT16776
2.5 VGS=0V
2.0 --0.1V
1.5 --0.2V
1.0 --0.3V
--0.4V
0.5
0
0 5 10 15 20 25
Drain-to-Source Voltage, VDS -- V
3.5 ID -- VGS
VDS=10V
30
IT16771
3.0
2.5
2.0
1.5
1.0
0.5
0
--1.0
Ta=75°C --25°C 25°C
--0.8 --0.6 --0.4 --0.2
0
Gate-to-Source Voltage, VGS -- V IT16773
7
VDS=10V
6
VGS=0V
f=1kHz
| yfs | -- IDSS
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Drain Current, IDSS -- mA
HD131113
10 Crss -- VDS
7
VGS=0V
f=1MHz
5
3
2
1.0
7
5
3
2
0.1
0.1
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain-to-Source Voltage, VDS -- V IT16777
No.A2258-2/3



ON Semiconductor TF412
TF412
Package Dimensions
unit : mm
SOT-883 (XDFN3), 1.0x0.6, 0.35P
CASE 506CB
ISSUE A
PIN ONE
REFERENCE
0.10 C
0.10 C
0.10 C
D AB
E
TOP VIEW
NOTE 3
A
3X 0.10 C
A1
SIDE VIEW
D2
C
SEATING
PLANE
e/2
e
2X b
0.10 M C A B
0.05 M C
E2
1
3X L
BOTTOM VIEW
RECOMMENDED
SOLDER FOOTPRINT*
1.10
2X 0.43
1
0.41
0.55
2X 0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
MILLIMETERS
DIM MIN MAX
A 0.340 0.440
A1 0.000 0.030
b 0.075 0.200
D 0.950 1.075
D2 0.620 BSC
e 0.350 BSC
E 0.550 0.675
E2 0.425 0.550
L 0.170 0.300
GENERIC
MARKING DIAGRAM*
XX M
XX = Specific Device Code
M = Date Code
*This information is generic. Please refer
to device data sheet for actual part
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PS No.A2258-3/3







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