SEMICONDUCTOR
TECHNICAL DATA
MJD112/L
EPITAXIAL PLANAR NPNTRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L.
MAXIMUM RATING (Ta=25 )
CHARACTERIST...
