2SK2919. K2919 Datasheet

K2919 2SK2919. Datasheet pdf. Equivalent

Part K2919
Description 2SK2919
Feature Ordering number:ENN6121 N-Channel Silicon MOSFET 2SK2919 Ultrahigh-Speed Switching Applications Fe.
Manufacture Sanyo
Datasheet
Download K2919 Datasheet

Ordering number:ENN6121 N-Channel Silicon MOSFET 2SK2919 Ul K2919 Datasheet
Recommendation Recommendation Datasheet K2919 Datasheet




K2919
Ordering number:ENN6121
N-Channel Silicon MOSFET
2SK2919
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· On-chip high-speed diode (trr=100ns).
Package Dimensions
unit:mm
2128
[2SK2919]
8.2
7.8
6.2
3
0.6
12
1.0 1.0
2.54 2.54
5.08
10.0
6.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Tc=25°C
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=10mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=480V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±30V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=1A
Static Drain-to-Source On-State Resistance
RDS(on) VGS=10V, ID=1A
Input Capacitance
Ciss VDS=20V, f=1MHz
Output Capacitance
Coss VDS=20V, f=1MHz
Reverse Transfer Capacitance
Crss VDS=20V, f=1MHz
Note ) Be careful in handling the 2SK2919 because it has no protection diode between Gate-to-Source.
0.3
0.6
7.8
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
Ratings
600
±30
2
8
35
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
600 V
1.0 mA
±100 nA
2.0 3.0 V
0.8 1.5
S
3.2 4.3
400 pF
55 pF
15 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21400TS (KOTO) TA-2283 No.6121–1/4



K2919
2SK2919
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse recovery time
Symbol
Conditions
td(on)
tr
td(off)
tf
VSD
trr
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=2A, VGS=0
IS=2A, di/dt=100Aµs
Switching Time Test Circuit
VGS
10V
0V
PW=1µs
D.C.0.5%
VGS
VDD=200V
ID=1A
RL=200
D VOUT
G
2SK2919
P.G 50
S
Ratings
min typ max
Unit
10 ns
12 ns
65 ns
40 ns
1.5 V
100 ns
I D - VDS
5
4 6.0V
10V 5.5V
3
5.0V
2
4.5V
1
4.0V
VGS=3.5V
0
0 4 8 12 16 20
Drain-to-Source Voltage, VDS – V
| yfs | - I D
5 VDS=10V
3
2
1.0 Tc=-25°C 25°C
7 75°C
5
3
2
0.1
7
5
5 7 0.1
2 3 5 7 1.0
23
Drain Current, ID – A
5 7 10
3.6
VDS=10V
3.2
ID - VGS
Tc=-25°C
2.8 25°C
2.4
75°C
2.0
1.6
1.2
0.8
0.4
0
02
46
8 10 12 14
Gate-to-Source Voltage, VGS – V
RDS(on) - VGS
6 Tc=25°C
5
4
ID=2A
1A
3
0.5A
2
1
0
0 2 4 6 8 10 12 14
Gate-to-Source Voltage, VGS – V
No.6121–2/4





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