Effect Transistor. AOP605 Datasheet

AOP605 Transistor. Datasheet pdf. Equivalent


Part AOP605
Description Complementary Enhancement Mode Field Effect Transistor
Feature AOP605 Complementary Enhancement Mode Field Effect Transistor General Description The AOP605/L uses.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOP605 Datasheet


AOP605 Complementary Enhancement Mode Field Effect Transisto AOP605 Datasheet
AOS Semiconductor Product Reliability Report AOP605/AOP605L AOP605L Datasheet
Recommendation Recommendation Datasheet AOP605 Datasheet




AOP605
AOP605
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP605/L uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
AOP605 and AOP605L are electrically identical.
-RoHS Compliant
-AOP605L is Halogen Free
Features
n-channel
VDS (V) = 30V
ID = 7.5A (VGS = 10V)
p-channel
-30V
-6.6A (VGS = -10V)
RDS(ON)
< 28m(VGS = 10V) < 35m(VGS = -10V)
< 43m(VGS = 4.5V) < 58m(VGS = -4.5V)
PDIP8
Top View
Bottom View
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
PDIP-8
D2
G2
S2
n-channel
D1
G1
S1
p-channel
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
7.5
6
30
Power Dissipation
TA=25°C
TA=70°C
PD
2.5
1.6
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Thermal Characteristics: p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Symbol
RθJA
RθJL
Typ
40
67
33
Typ
38
66
30
Max p-channel
-30
±20
-6.6
-5.3
-30
2.5
1.6
-55 to 150
Units
V
V
A
W
°C
Max
50
80
40
Max
50
80
40
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



AOP605
AOP605
n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=7.5A
Static Drain-Source On-Resistance
Forward Transconductance
Body Diode Forward Voltage
VGS=4.5V, ID=6.0A
VDS=5V, ID=7.5A
IS=1A, VGS=0V
Maximum Body-DiodeContinuous Current
TJ=55°C
TJ=125°C
30
1
30
12
1
5
100
1.8 3
22.6 28
33
16
0.76
43
1
4
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance.
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
680 820
102
77
1.2 2
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
13.84 16.6 nC
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=7.5A
6.74
1.82
8.1
nC
nC
Qgd Gate Drain Charge
3.2 nC
tD(on)
Turn-On DelayTime
4.6 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.0, 4.1 ns
tD(off)
Turn-Off DelayTime
RGEN=6
20.6
ns
tf Turn-Off Fall Time
5.2 ns
trr Body Diode Reverse Recovery time IF=7.5A, dI/dt=100A/µs
16.5 20
ns
Qrr Body Diode Reverse Recovery charge IF=7.5A, dI/dt=100A/µs
7.8 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 4 : Jan 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)