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BUZ342

Siemens Semiconductor Group
Part Number BUZ342
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 342 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resista...
Datasheet PDF File BUZ342 PDF File

BUZ342
BUZ342

Overview
BUZ 342 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature Pin 1 G Type BUZ 342 Pin 2 D Pin 3 S VDS 50 V ID 60 A RDS(on) 0.
01 Ω Package TO-218 AA Ordering Code C67078-S3135-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A ID IDpuls 240 TC = 150 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 460 dv/dt mJ ID = 60 A, VDD = 25 V, RGS = 25 Ω L = 128 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 0 A, VDS = 0 V, diF/dt = 0 A/µs Tjmax = 0 °C Gate source voltage Power dissipation VGS Ptot ± 20 400 V W TC = 25 °C Operating temperature Stora...


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