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BUZ349

Infineon Technologies AG
Part Number BUZ349
Manufacturer Infineon Technologies AG
Description Power Transistor
Published Mar 23, 2005
Detailed Description SIPMOS ® Power Transistor BUZ 349 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type...
Datasheet PDF File BUZ349 PDF File

BUZ349
BUZ349

Overview
SIPMOS ® Power Transistor BUZ 349 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 100 V ID 32 A RDS(on) 0.
06 Ω Package Ordering Code BUZ 349 TO-218 AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 27 ˚C ID A 32 Pulsed drain current TC = 25 ˚C IDpuls 128 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 32 A, VDD = 25 V, RGS = 25 Ω L = 322 µH, Tj = 25 ˚C 32 15 mJ 220 VGS Ptot Gate source voltage Power dissipation TC = 25 ˚C ± 20 125 V W Operating temperature Storage temperature Thermal resistance, chip case Th...


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