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Power MOSFET. IRFP240 Datasheet

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Power MOSFET. IRFP240 Datasheet






IRFP240 MOSFET. Datasheet pdf. Equivalent




IRFP240 MOSFET. Datasheet pdf. Equivalent





Part

IRFP240

Description

N-Channel Power MOSFET



Feature


Data Sheet January 2002 IRFP240 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silico n gate power field effect transistor i s an advanced power MOSFET designed, te sted, and guaranteed to withstand a spe cified level of energy in the breakdow n avalanche mode of operation. All of t hese power MOSFETs are designed for app lications such as swit.
Manufacture

Fairchild Semiconductor

Datasheet
Download IRFP240 Datasheet


Fairchild Semiconductor IRFP240

IRFP240; ching regulators, switching convertors, motor drivers, relay drivers, and drive rs for high power bipolar switching tra nsistors requiring high speed and low g ate drive power. These types can be ope rated directly from integrated circuits . Formerly developmental type TA17422. Ordering Information PART NUMBER PAC KAGE BRAND IRFP240 TO-247 IRFP240 NOTE: When orderin.


Fairchild Semiconductor IRFP240

g, include the entire part number. Feat ures • 20A, 200V • rDS(ON) = 0.180 • Single Pulse Avalanche Energy Ra ted • SOA is Power Dissipation Limite d • Nanosecond Switching Speeds • L inear Transfer Characteristics • High Input Impedance • .


Fairchild Semiconductor IRFP240

.

Part

IRFP240

Description

N-Channel Power MOSFET



Feature


Data Sheet January 2002 IRFP240 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silico n gate power field effect transistor i s an advanced power MOSFET designed, te sted, and guaranteed to withstand a spe cified level of energy in the breakdow n avalanche mode of operation. All of t hese power MOSFETs are designed for app lications such as swit.
Manufacture

Fairchild Semiconductor

Datasheet
Download IRFP240 Datasheet




 IRFP240
Data Sheet
January 2002
IRFP240
20A, 200V, 0.180 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17422.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP240
TO-247
IRFP240
NOTE: When ordering, include the entire part number.
Features
• 20A, 200V
• rDS(ON) = 0.180
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
IRFP240 Rev. B




 IRFP240
IRFP240
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRFP240
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200
200
20
12
80
±20
150
1.2
V
V
A
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
510
-55 to 150
300
260
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
LD
VGS = 0V, ID = 250µA (Figure 10)
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
VDS > ID(ON) x rDS(ON)MAX, VGS = 11V (Figure 7)
VGS = ±20V
VGS = 10V, ID = 10A (Figures 8, 9)
VDS 10V, ID = 11A
VDD = 100V, ID 18A, RGS = 9.1, VGS = 10V,
RL = 5.4
MOSFET Switching Times are Essentially
Independent of Operating Temperature
VGS = 10V, ID = 18A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
Measured between the
Contact Screw on
Header that is Closer to
Source and Gate Pins
and Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
Internal Source Inductance
LS Measured from the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
G
LD
LS
MIN
200
2.0
-
-
20
-
-
6.7
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
0.14
11
14
51
45
36
43
10
32
1275
500
160
5.0
12.5
MAX
-
4.0
25
250
-
±100
0.18
-
21
77
68
54
60
-
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
nH
Junction to Case
Junction to Ambient
RθJC
RθJA
Free Air Operation
S
-
-
0.83
oC/W
- - 30 oC/W
©2002 Fairchild Semiconductor Corporation
IRFP240 Rev. B




 IRFP240
IRFP240
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
G
D
MIN TYP MAX UNITS
- - 20 A
- - 80 A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = 18A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs
--
120 250
1.3 2.6
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 1.9mH, RGS = 50, peak IAS = 20A.
2.0
530
5.6
V
ns
µC
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 50 100
TC, CASE TEMPERATURE (oC)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
16
12
8
4
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-2 SINGLE PULSE
10-130-5
10-4
PDM
t1
t2 t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
0.1
1
10
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2002 Fairchild Semiconductor Corporation
IRFP240 Rev. B



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