N-channel MOSFET. 2N7002E Datasheet

2N7002E MOSFET. Datasheet pdf. Equivalent

Part 2N7002E
Description N-channel MOSFET
Feature N-Channel 60 V (D-S) MOSFET 2N7002E Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 60 3 a.
Manufacture Vishay
Datasheet
Download 2N7002E Datasheet

SPICE MODEL: 2N7002E 2N7002E N-CHANNEL ENHANCEMENT MODE FIE 2N7002E Datasheet
2N7002E N-channel TrenchMOS™ FET Rev. 02 — 26 April 2005 Pro 2N7002E Datasheet
N-Channel 60V MOSFET Features: Surface-mounted package Halog 2N7002E Datasheet
N-Channel 60 V (D-S) MOSFET 2N7002E Vishay Siliconix PRODU 2N7002E Datasheet
2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N−Channel 2N7002E Datasheet
Enhancement Mode MOSFET (N-Channel) 2N7002E Enhancement Mod 2N7002E Datasheet
Recommendation Recommendation Datasheet 2N7002E Datasheet





2N7002E
N-Channel 60 V (D-S) MOSFET
2N7002E
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60 3 at VGS = 10 V
ID (mA)
240
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Low On-Resistance: 3
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 7.5 ns
• Low Input and Output Leakage
Compliant to RoHS Directive 2002/95/EC
TO-236
(SOT-23)
G1
S2
3D
Marking Code: 7E
Top View
Ordering Information: 2N7002E-T1-E3 (Lead (Pb)-free)
2N7002E-T1-GE3 (Lead (Pb)-free and Halogen-free)
BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Currenta
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
Thermal Resistance, Junction-to-Ambient
RthJA
Operating Junction and Storage Temperature Range
TJ, Tstg
Notes:
a. Pulse width limited by maximum junction temperature.
Limit
60
± 20
240
190
1300
0.35
0.22
357
- 55 to 150
Unit
V
mA
W
°C/W
°C
Document Number: 70860
S11-0183-Rev. F, 07-Feb-11
www.vishay.com
1



2N7002E
2N7002E
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 10 µA
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 15 V
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V , TJ = 125 °C
On-State Drain Currentb
Drain-Source On-Resistanceb
Forward Transconductanceb
ID(on)
RDS(on)
gfs
VGS = 10 V, VDS = 7.5 V
VGS = 4.5 V, VDS = 10 V
VGS = 10 V, ID = 250 mA
VGS = 4.5 V, ID = 200 mA
VDS = 15 V, ID = 200 mA
Diode Forward Voltage
Dynamica
VSD IS = 200 mA, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10 V, VGS = 4.5 V
ID 250 mA
Qgd
Input Capacitance
Output Capacitance
Ciss
Coss
VDS = 5 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Switchinga, c
Crss
Turn-On Time
Turn-Off Time
td(on)
td(off)
VDD = 10 V, RL = 40
ID 250 mA, VGEN = 10 V, Rg = 10
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: pulse width 300 µs duty cycle 2 %.
c. Switching time is essentially independent of operating temperature.
Min.
Limits
Typ.a
Max.
Unit
60 68
V
1 2 2.5
± 10 nA
1
µA
500
800 1300
500 700
mA
1.2 3
1.8 4
600 mS
0.85
1.2
V
0.4 0.6
0.06
nC
0.06
21
7 pF
2.5
13 20
ns
18 25
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70860
S11-0183-Rev. F, 07-Feb-11





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)