HM4618
N and P-Channel Enhancement Mode Power MOSFET
Description
The HM4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
● N-Channel VDS = 40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) <...
