2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS =0.060 Ω typ.
High speed switching 4V gate drive device can be driven from 5V source
Outline
ADE-208-549C (Z) 4th. Edition Jun 1998
DPAK–2
44
D G
S
12 3
12 3
1. Gate 2. Drain 3. Source 4. Drain
2SK2925(L),2SK2925(S)
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