Mode MOSFET. 8205A Datasheet

8205A Datasheet PDF, Equivalent


Part Number

8205A

Description

Dual N-Channel Enhancement Mode MOSFET

Manufacture

HOTTECH

Total Page 2 Pages
PDF Download
Download 8205A Datasheet


8205A Datasheet
Dual N-Channel Enhancement Mode MOSFET
FEATURES
5A,20V.rDS(on) = 0.025 @ VGS = 4.5 V
rDS(on) = 0.040 @ VGS = 2.5 V.
Plastic-Encapsulate Mosfets
8205A
N -Channel MOSFET
TSSOP-8
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation TA = 25
TA = 70
Thermal Resistance,Junction-to-Ambient
Thermal Resistance,Junction-to-Case
Jumction temperature and Storage temperature
Symbol
VDS
VGS
ID
IDM
PD
R JA
R JC
Tj.Tstg
Rating
20
8
5
20
2.0
1.6
78
40
-55 to +150
Unit
V
V
A
A
W
W
/W
/W
GUANGDONG HOTTECH INDUSTRIAL CO., LTD
Page:P2 -P1

8205A Datasheet
Plastic-Encapsulate Mosfets
8205A Electrical Characteristics (TA=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gat e Thres hol d V ol t age
Drain-Source On-State Resistance *
On-S t at e Drai n Current *
Forward Transconductance *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Maximum Continuous Drain-Source Diode
Forward Current
Diode Forward Voltage *
* Pulse test; pulse width 300 s, duty cycle
Symbol
Testconditons
VDSS VGS = 0 V, ID = 250 A
IDSS
VDS = 20V , VGS = 0V
VDS = 20V , VGS = 0V , TJ =55
IGSS VDS = 0V , VGS = 8V
GS(thV) VDS = VGS , ID = 250uA
rDS(on) VGS = 4.5V , DI = 5A
VGS = 2.5V , ID = 4A
D( on)I VDS = 5V , VGS = 4.5V
gfs VDS = 5V , ID =3A
Ciss
Coss VDS = 10 V, VGS = 0 V,f = 1.0 MHz
Crss
Qg
Qgs VDS = 10V , VGS = 4.5V , ID = 3A
Qgd
td(on)
tr
td(off)
VDD = 10V
ID = 1A , VGS = 4.5V , RG = 6
tf
IS
VSD
2 %.
IS = 1.7 A, VGS = 0 V
Min Typ Max Unit
20 V
1
uA
5
50 nA
0. 5 1. 0 V
0.020 0.025
0.035 0.040
15 A
11 S
700 pF
175 pF
85 pF
7 10
1.2 nC
1.9
8 16
10 18
ns
18 29
5 10
1.3 A
0.65 1.2 V
GUANGDONG HOTTECH INDUSTRIAL CO., LTD
Page:P2 -P2


Features Datasheet pdf Dual N-Channel Enhancement Mode MOSFET F EATURES 5A,20V.rDS(on) = 0.025 @ VGS = 4.5 V rDS(on) = 0.040 @ VGS = 2.5 V. P lastic-Encapsulate Mosfets 8205A N -Cha nnel MOSFET TSSOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise note d) Parameter Drain-Source Voltage Gate -Source Voltage Continuous Drain Curren t Pulsed Drain Current Maximum Power Di ssipation TA = 25 TA = 70 Thermal Resis tance,Junction-to-Ambient Thermal Resis tance,Junction-to-Case Jumction tempera ture and Storage temperature Symbol VD S VGS ID IDM PD R JA R JC Tj.Tstg Rati ng 20 8 5 20 2.0 1.6 78 40 -55 to +150 Unit V V A A W W /W /W GUANGDONG HOTT ECH INDUSTRIAL CO., LTD Page:P2 -P1 P lastic-Encapsulate Mosfets 8205A Elect rical Characteristics (TA=25°C, unless otherwise noted) Parameter Drain-Sour ce Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gat e T hres hol d V ol t age Drain-Source On-S tate Resistance * On-S t at e Drai n Cu rrent * Forward Transconductance * Input Capacitance Output Cap.
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