MJD31C
100 V, 3 A NPN high power bipolar transistor
16 September 2020
Product data sheet
1. General description
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32C
2. Features and benefits
High thermal power dissipation capability High energy efficiency due to less ...