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MJD31C Datasheet, Equivalent, bipolar transistor.

3A NPN high power bipolar transistor

3A NPN high power bipolar transistor

 

 

 

Part MJD31C
Description 3A NPN high power bipolar transistor
Feature MJD31C 100 V, 3 A NPN high power bipola r transistor 23 May 2019 Preliminary data sheet 1.
General description NPN high power bipolar transistor in a powe r SOT428 Surface-Mounted Device (SMD) p lastic package.
PNP complement: MJD32C 2.
Features and benefits
• High ther mal power dissipation capability
• Hi gh energy efficiency due to less heat g eneration
• Electrically similar to p opular MJD31 series
• Low collector e mitter saturation voltage
• Fast swit ching speeds 3.
Applications
• Power management
• Load switch
• Linear mode voltage regulator
• Constant cur rent drive backlighting applicat .
Manufacture nexperia
Datasheet
Download MJD31C Datasheet
Part MJD31C
Description 3A NPN high power bipolar transistor
Feature MJD31C 100 V, 3 A NPN high power bipola r transistor 23 May 2019 Preliminary data sheet 1.
General description NPN high power bipolar transistor in a powe r SOT428 Surface-Mounted Device (SMD) p lastic package.
PNP complement: MJD32C 2.
Features and benefits
• High ther mal power dissipation capability
• Hi gh energy efficiency due to less heat g eneration
• Electrically similar to p opular MJD31 series
• Low collector e mitter saturation voltage
• Fast swit ching speeds 3.
Applications
• Power management
• Load switch
• Linear mode voltage regulator
• Constant cur rent drive backlighting applicat .
Manufacture nexperia
Datasheet
Download MJD31C Datasheet

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