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MJD31C

nexperia

3A NPN transistor


Description
MJD31C 100 V, 3 A NPN high power bipolar transistor 16 September 2020 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32C 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less ...



nexperia

MJD31C

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