K3155 MOSFET Datasheet

K3155 Datasheet PDF, Equivalent


Part Number

K3155

Description

Silicon N-Channel MOSFET

Manufacture

Renesas

Total Page 8 Pages
Datasheet
Download K3155 Datasheet


K3155
2SK3155
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS = 100 mtyp.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
REJ03G1080-0500
(Previous: ADE-208-768C)
Rev.5.00
Sep 07, 2005
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G 1. Gate
2. Drain
3. Source
12 3
S
Rev.5.00 Sep 07, 2005 page 1 of 7

K3155
2SK3155
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
Ratings
150
±20
15
60
15
15
16
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
150
±20
1.0
8.5
Typ
0.10
0.12
14
850
300
160
13
100
195
110
0.9
140
Max
±10
10
2.5
0.13
0.15
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 150 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 8 A, VGS = 10 VNote4
ID = 8 A, VGS = 4 V Note4
ID = 8 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 8 A, VGS = 10 V,
RL = 3.75
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0
diF/ dt = 50 A/ µs
Rev.5.00 Sep 07, 2005 page 2 of 7


Features 2SK3155 Silicon N Channel MOS FET High S peed Power Switching Features • Low o n-resistance RDS = 100 mΩ typ. • Hi gh speed switching • 4 V gate drive d evice can be driven from 5 V source Out line REJ03G1080-0500 (Previous: ADE-20 8-768C) Rev.5.00 Sep 07, 2005 RENESAS Package code: PRSS0003AD-A (Package nam e: TO-220FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.5.00 Sep 07, 2005 page 1 of 7 2SK3155 Absolute Maximum Ratings Item Drain to source voltage Ga te to source voltage Drain current Drai n peak current Body-drain diode reverse drain current Avalanche current Avalan che energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 2 5°C, Rg ≥ 50 Ω Symbol VDSS VGSS I D ID(pulse)Note1 IDR IAP Note3 EAR Note 3 Pch Note2 Tch Tstg Ratings 150 ±20 15 60 15 15 16 30 150 –55 to +150 (T a = 25°C) Unit V V A A A A mJ W °C ° C Electrical Characteristics Item Drain to source breakdown voltage Gate to source bre.
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