N-Channel MOSFET. K3155 Datasheet

K3155 MOSFET. Datasheet pdf. Equivalent

K3155 Datasheet
Recommendation K3155 Datasheet
Part K3155
Description Silicon N-Channel MOSFET
Feature K3155; 2SK3155 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 100 .
Manufacture Renesas
Datasheet
Download K3155 Datasheet





Renesas K3155
2SK3155
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS = 100 mtyp.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
REJ03G1080-0500
(Previous: ADE-208-768C)
Rev.5.00
Sep 07, 2005
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G 1. Gate
2. Drain
3. Source
12 3
S
Rev.5.00 Sep 07, 2005 page 1 of 7



Renesas K3155
2SK3155
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
Ratings
150
±20
15
60
15
15
16
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
150
±20
1.0
8.5
Typ
0.10
0.12
14
850
300
160
13
100
195
110
0.9
140
Max
±10
10
2.5
0.13
0.15
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 150 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 8 A, VGS = 10 VNote4
ID = 8 A, VGS = 4 V Note4
ID = 8 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 8 A, VGS = 10 V,
RL = 3.75
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0
diF/ dt = 50 A/ µs
Rev.5.00 Sep 07, 2005 page 2 of 7



Renesas K3155
2SK3155
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0 50 100 150 200
Case Temperature TC (°C)
Typical Output Characteristics
20
10 V
16
5V
4V
Pulse Test
3.5 V
12
3V
8
4
VGS = 2.5 V
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
2 ID = 15 A
10 A
1
5A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.5.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
500
200
100
50
20
10
5
2
1
0.5
OthpiseararetiaonisiDnC(PTOWcp==e1r20a5mt°iosC(n1)s1h0o0t1) 0µsµs
0.2 limited by RDS(on)
0.1 Ta = 25°C
0.05
0.1 0.3 1 3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 10 V
Pulse Test
16
12
8
75°C
25°C
4
Tc = –25°C
0 1 23 45
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
VGS = 4 V
10 V
0.02
0.01
0.1 0.3
1
3 10 30 100
Drain Current ID (A)





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