BAS86 Diode Datasheet

BAS86 Datasheet, PDF, Equivalent


Part Number

BAS86

Description

Schottky Diode

Manufacture

GOOD-ARK

Total Page 2 Pages
Datasheet
Download BAS86 Datasheet


BAS86
Features
For general purpose applications.
This diode features low turn-on voltage. This device are
protected by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
Metal-on-silicon Schottky barrier device which is protected by a
PN junction guard ring.
The low forward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing and coupling
diodes for fast switching and low logic level applications.
This diode is also available in the DO-35 case with type
designation BAT86.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
Cathode Band Color: Green
BAS86
Small-Signal Diode
Schottky Diode
Maximum Ratings and Thermal Characteristics
(TA=25oC unless otherwise noted.)
Parameter
Symbol
Value
Continuous reverse voltage
VR 50
Forward continuous current at Tamb=25oC
Repetitive peak forward current
at tp<1s, υ<0.5, Tamb=25oC
Power dissipation at Tamb=25oC
IF 200 (1)
IFRM 500 (1)
Ptot 200 (1)
Thermal resistance junction to ambient air
RθJA
300 (1)
Junction temperature
Tj 125
Ambient operating temperature range
Tamb -65 to +125
Storage temperature range
TS -65 to +150
Notes: 1. Valid provided that electrodes are kept at ambient temperature.
Unit
Volts
mA
mA
mW
oC/W
oC
oC
oC
699

BAS86
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Reverse breakdown voltage
Leakage current
Forward voltage
Capacitance
Reverse recovery time
V(BR)R
IR
VF
Ctot
trr
IR=10uA (pulsed)
VR=25V
Pulse Test tp<300us, δ<2%
IF=0.1mA
IF=1mA
I =10mA
F
IF=30mA
IF=100mA
VR=1V, f=1MHz
IF=10mA, IR=10mA,
I =1mA
R
50 -
- Volts
- 0.2 0.5 uA
- 0.200 0.300
-
-
0.275
0.365
0.380
0.450
Volt
- 0.460 0.600
- 0.700 0.900
- - 8 pF
- - 5 ns
700


Features Features For general purpose application s. This diode features low turn-on volt age. This device are protected by a PN junction guard ring against excessive v oltage, such as electrostatic discharge s Metal-on-silicon Schottky barrier dev ice which is protected by a PN junction guard ring. The low forward voltage dr op and fast switching make it ideal for protection of MOS devices, steering, b iasing and coupling diodes for fast swi tching and low logic level applications . This diode is also available in the D O-35 case with type designation BAT86. Mechanical Data Case: MiniMELF Glass Ca se (SOD-80) Weight: approx. 0.05g Catho de Band Color: Green BAS86 Small-Signa l Diode Schottky Diode Maximum Ratings and Thermal Characteristics (TA=25oC u nless otherwise noted.) Parameter Sym bol Value Continuous reverse voltage VR 50 Forward continuous current at T amb=25oC Repetitive peak forward curren t at tp<1s, υ<0.5, Tamb=25oC Power dis sipation at Tamb=25oC IF 200 (1) IFRM 500 (1) Ptot 200 (1) The.
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