FDD6630A N-Channel MOSFET Datasheet

FDD6630A Datasheet, PDF, Equivalent


Part Number

FDD6630A

Description

N-Channel MOSFET

Manufacture

On Semiconductor

Total Page 5 Pages
Datasheet
Download FDD6630A Datasheet


FDD6630A
FDD6630A
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
Applications
DC/DC converter
Motor drives
Features
21 A, 30 V
RDS(ON) = 35 m@ VGS = 10 V
RDS(ON) = 50 m@ VGS = 4.5 V
Low gate charge (5nC typical)
Fast switching
High performance trench technology for extremely
low RDS(ON)
D
G
S
TO-252
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
TJ, TSTG
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6630A
FDD6630A
13’’
D
G
S
Ratings
30
±20
21
100
28
3.2
1.3
–55 to +175
4.5
40
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2011 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
FDD6630A/D

FDD6630A
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V
IAR Drain-Source Avalanche Current
Off Characteristics
BV DSS
BV DSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V,
VGS = 20 V,
VGS = –20 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
V GS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 7.6 A
VGS = 4.5 V, ID = 6.3 A
VGS = 10 V, ID = 7.6 A, TJ = 125°C
VGS = 10 V,
VDS = 5 V
VDS = 5 V,
ID = 7.6 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Crss Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
VDS = 15 V,
VGS = 5 V
ID = 7.6 A,
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 2.7 A (Note 2)
Voltage
Min
30
1
20
Typ
23
1.7
–4
28
40
44
13
462
113
40
5
8
17
13
5
2
1.4
0.8
Max Units
55 mJ
7.6 A
V
mV/°C
1
100
–100
µA
nA
nA
3V
mV/°C
35 m
50
58
A
S
pF
pF
pF
11 ns
17 ns
28 ns
24 ns
7 nC
nC
nC
2.7 A
1.2 V
Notes:
1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCAis determined by the user's board design.
a) RθJA= 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA= 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
PD
RDS( ON )
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
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Features FDD6630A FDD6630A 30V N-Channel PowerTr ench® MOSFET General Description This N-Channel MOSFET has been designed spe cifically to improve the overall effici ency of DC/DC converters using either s ynchronous or conventional switching PW M controllers. It has been optimized fo r low gate charge, low RDS( ON) and fas t switching speed. Applications • DC/ DC converter • Motor drives Features • 21 A, 30 V RDS(ON) = 35 mΩ @ V GS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V • Low gate charge (5nC typical) • Fast switching • High performanc e trench technology for extremely low R DS(ON) D G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Dra in-Source Voltage Gate-Source Voltage D rain Current – Continuous – Pulsed Power Dissipation (Note 3) (Note 1a) ( Note 1) (Note 1a) TJ, TSTG (Note 1b) Operating and Storage Junction Tempera ture Range Thermal Characteristics Rθ JC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient .
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