N-Channel MOSFET. AO4862 Datasheet

AO4862 MOSFET. Datasheet pdf. Equivalent

Part AO4862
Description Dual N-Channel MOSFET
Feature AO4862 30V Dual N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO4862 Datasheet



AO4862
AO4862
30V Dual N-Channel AlphaMOS
General Description
• Trench Power AlphaMOS (αMOS LV) technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• System switch, inverter
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
30V
4.5A
< 50mΩ
< 68mΩ
Top View
SOIC-8
Bottom View
Top View
S2 1
G2 2
S1 3
G1 4
8
7
6
5
D2
D2
D1
D1 G1
Pin1
Orderable Part Number
AO4862
Package Type
SO-8
Form
Tape & Reel
D1 D2
G2
S1
S2
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH
C
VGS
ID
IDM
IAS
EAS
VDS Spike
Power Dissipation B
10µs
TA=25°C
TA=70°C
VSPIKE
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
4.5
3.5
18
8
3
36
1.7
1.1
-55 to 150
Units
V
V
A
A
mJ
V
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
52
80
35
Max
70
100
45
Units
°C/W
°C/W
°C/W
Rev.1.0: May 2014
www.aosmd.com
Page 1 of 5



AO4862
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=4.5A
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=3A
VDS=5V, ID=4.5A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=4.5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=3.3,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=4.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs
Min
30
1.5
1
Typ
2
39
63
50
10
0.79
200
35
25
2
4.05
2
0.55
1
4.5
1.5
18.5
15.5
7.5
2.5
Max Units
1
5
±100
2.5
50
78
68
1
2
V
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
3Ω
10 nC
6 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2014
www.aosmd.com
Page 2 of 5





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)