N-Channel MOSFET. 2N7002A Datasheet

2N7002A MOSFET. Datasheet pdf. Equivalent

Part 2N7002A
Description N-Channel MOSFET
Feature MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Total Page 4 Pages
Datasheet
Download 2N7002A Datasheet



2N7002A
MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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Features
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
Halogen free available upon request by adding suffix "-HF"
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
VGS
VGSm
Rating
Drain-source Voltage
Gate-source Voltage
Peak Gate-source Voltage
Tp<50uS, duty cycle=0.25
Rating
60
±30
±40
ID
PD
TJ
TSTG
RthJA
Drain Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance fromJunction to Ambient
115
300
-55 to +150
-55 to +150
417
Unit
V
V
V
mA
mW
к
к
к/W
2N7002A
N-Channel MOSFET
SOT-23
A
D
3
12
FE
CB
1.GATE
2. SOURCE
3. DRAIN
Equivalent circuit
Marking7002A
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .104
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
NOTE
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: B
www.mccsemi.com
1 of 4
2018/07/26



2N7002A
MCC
R
Micro Commercial Components
Electrical characteristics (TA=25 oC, unless otherwise noted)
Parameter
Static Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
On-state drain current
Drain-source on-resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
ID(ON)
RDS(on)
On-state drain-source voltage
VDS(on)
Dynamic characteristics
Input Capacitance1)
Ciss
Output Capacitance1)
Coss
Reverse Transfer Capacitance1)
Crss
Switching Characteristics
Turn-on delay time1)
td(on)
Turn-off delay time1)
td(off)
Source-Drain Diode characteristics
Source-Drain Diode characteristics
Diode Forward voltage
VSD
Source Current Continuous
Notes:
IS
1) These parameters have no way to verify.
Test Condition
VGS = 0V, ID =250µA
VDS =60V,VGS = 0V
VGS =±30V, VDS = 0V
VDS =VGS, ID =250µA
VGS=10V, VDS=7V
VGS =10V, ID =500mA
VGS =4.5V, ID =200mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VDS=25V,VGS=0V,f=1MHz
VDD=25 V, RL=50Ω
ID=500mA,VGEN=10V,
RG=25Ω
VGS =0V, IS=115mA
Min.
60
1
500
0.6
Typ. Max. Unit
V
1 uA
±1 uA
1.4 2.5 V
mA
3
4
3
0.375
V
50
25 pF
5
20
ns
40
0.82 1.0
V
115 mA
Revision: B
www.mccsemi.com
2 of 4
2018/07/26





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