N-Channel MOSFET. 2N7002A Datasheet

2N7002A MOSFET. Datasheet pdf. Equivalent

2N7002A Datasheet
Recommendation 2N7002A Datasheet
Part 2N7002A
Description N-Channel MOSFET
Feature 2N7002A; Features • High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Epoxy.
Manufacture MCC
Datasheet
Download 2N7002A Datasheet




MCC 2N7002A
Features
High Density Cell Design for Low RDS(ON)
Voltage Controlled Small Signal Switch
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
2N7002A
N-Channel
MOSFET
Maximum Ratings
• Operating Junction Temperature Range: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Thermal Resistance: 417°C/W Junction to Ambient
Parameter
Drain-Source Voltage
Gate-Source Voltage
Peak Gate-Source Voltage Tp<50μs,
Duty Cycle=0.25
Drain Current-Continuous
Power Dissipation
Symbol Rating
Unit
VDS
60
V
VGS
±30
V
VGSM
±40
V
ID
0.115
A
PD
0.3
W
Internal Structure
D
G
S
1. GATE
2. SOURCE
3. DRAIN
Marking:7002A
SOT-23
A
D
3
12
F
E
CB
G
H
J
L
K
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.110 0.120 2.80 3.04
B 0.083 0.104 2.10 2.64
C 0.047 0.055 1.20 1.40
D 0.034 0.041 0.85 1.05
E 0.067 0.083 1.70 2.10
F 0.018 0.024 0.45 0.60
G 0.0004 0.006 0.01 0.15
H 0.035 0.043 0.90 1.10
J 0.003 0.007 0.08 0.18
K 0.012 0.020 0.30 0.51
L 0.007 0.020 0.20 0.50
NOTE
Suggested Solder Pad Layout
0.031
0.800
0.035
0.900
0.079
2.000
inches
mm
0.037
0.950
0.037
0.950
Rev.3-1-01012019
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MCC 2N7002A
2N7002A
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA
Gate-Threshold Voltage
VGS(th) VDS=VGS, ID=250µA
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
On-State Drain-Source Voltage
Dynami Characteristics
IGSS
IDSS
ID(ON)
RDS(on)
VDS(on)
VGS =±30V, VDS =0V
VDS =60V, VGS =0V
VDS =7.0V, VGS =10V
VGS=10V, ID=500mA
VGS=4.5V, ID=200mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
Input Capacitance(1)
Output Capacitance(1)
Reverse Transfer Capacitance(1)
Switching Characteristics
Ciss
Coss
Crss
VDS=25V,VGS=0V, f=1MHz
Turn-On Delay Time(1)
td(on)
Turn-Off Delay Time(1)
td(off)
Source-Drain Diode Characteristics
VDD=25V,VGEN=10V,RL=50Ω,
ID=500mA,RGEN=25Ω
Diode Forward Voltage
VSD VGS=0V, IS=115mA
Source Current Continuous
IS
Note: 1. These parameters have no way to verify.
Min
60
1.0
500
0.6
Typ Max Unit
V
1.4
2.5
V
±1
µA
1
µA
mA
3
Ω
4
3
V
0.375
50
25
pF
5
20
ns
40
0.82
1
V
115
mA
Rev.3-1-01012019
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MCC 2N7002A
Curve Characteristics
2N7002A
Fig. 1 - Output Characteristics
0.8
TA=25°C
Pulsed
VGS=10V,5V
0.6
0.4
VGS=3V
0.2
VGS=2.5V
0.0
0
1
2
3
4
5
Drain To Source Voltage (V)
3.5
TA=25°C
Pulsed
3.0
Fig. 3 - RDS(ON)ID
2.5
VGS=5V
2.0
VGS=10V
1.5
0.0
0.2
0.4
0.6
0.8
Drain Current (A)
1
Pulsed
Fig. 5 - ISVSD
0.1
0.01
0.001
TA=125°C
TA=25°C
0.0001
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Source To Drain Voltage (V)
0.8
VDS= 3V
Pulesd
0.6
Fig. 2 - Transfer Characteristics
0.4
TA=125°C
0.2
TA=25°C
0.0
1.0
6
5
1.5
2.0
2.5
3.0
3.5
4.0
Gate To Source Voltage (V)
Fig. 4 - RDS(ON)VGS
Pulsed
ID=500mA
TA=25°C
4
3
2
1
2
4
6
8
10
Gate To Source Voltage (V)
Fig. 6 - Threshold Voltage
1.6
1.4
ID= 250μA
1.2
1.0
25
50
75
100
125
Junction Temperature (°C)
Rev.3-1-01012019
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