N-Channel MOSFET. P1006BI Datasheet

P1006BI MOSFET. Datasheet pdf. Equivalent

P1006BI Datasheet
Recommendation P1006BI Datasheet
Part P1006BI
Description N-Channel MOSFET
Feature P1006BI; P1006BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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UNIKC P1006BI
P1006BI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 10mΩ @VGS = 10V
ID
66A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
66
42
150
Avalanche Current
IAS 38.5
Avalanche Energy
L = 0.1mH
EAS
74
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
96
38
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.3
62.5
UNITS
°C / W
REV 1.0
1 2017/2/16



UNIKC P1006BI
P1006BI
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
60
1.3 1.8 2.3
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V
VDS = 40V, VGS = 0V , TJ = 125 °C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
8.1 13
6.8 10
60
DYNAMIC
Input Capacitance
Ciss
1920
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
215
Reverse Transfer Capacitance
Crss
140
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
0.7
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 30V , ID = 20A
VDS = 30V ,ID @ 20A,
VGS = 10V, RGEN = 6Ω
42
23
6
12
29
31
51
31
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
66
1.3
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
Qrr
IF = 20A, dl/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
26
19
2Independent of operating temperature.
3Package limitation current is 30A.
UNITS
V
nA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2017/2/16



UNIKC P1006BI
P1006BI
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2017/2/16





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