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2SC6076

NPN Transistor

Description

isc Silicon NPN Power Transistor 2SC6076 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)=0.5V(Max) @IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power Amplifier Applications ·Power Switching Applications ABSOLUTE MAXIM...

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