DatasheetsPDF.com

BUW26

Part Number	BUW26
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 450V(Min.) ·High Speed Sw...
Datasheet	BUW26 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 450V(Min.
) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 3 A 125 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTI...

Similar Datasheet

BUW1015 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - STMicroelectronics
BUW11 NPN Transistor - INCHANGE
BUW11 SILICON POWER TRANSISTOR - SavantIC
BUW11A NPN Transistor - INCHANGE
BUW11A SILICON POWER TRANSISTOR - SavantIC
BUW11AF Silicon diffused power transistors - NXP
BUW11AF NPN Transistor - INCHANGE
BUW11AF SILICON POWER TRANSISTOR - SavantIC
BUW11AW Silicon diffused power transistors - NXP
BUW11AW Silicon NPN Power Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)