isc SiliconNPN Darlington Power Transistor
INCHANGE Semiconductor
BDV67/A/B/C
DESCRIPTION ·Collector Current -IC= 16A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2. 0V(Max. )@ IC= 10A ·Complement to Type BDV66/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BDV67
80
VCBO
Collector-Base Voltage
BDV67A
100
V
BDV67B
120
BDV67C
140
BDV67
60
VCEO
Collector-Emitter Voltage
BDV67A
80
BDV67B
100
V
BDV67C
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Contin...