N-Channel MOSFET. TK20E60W5 Datasheet

TK20E60W5 MOSFET. Datasheet pdf. Equivalent


Part TK20E60W5
Description N-Channel MOSFET
Feature MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60W5 1. Applications • Switching Voltage Regulators 2. F.
Manufacture Toshiba
Datasheet
Download TK20E60W5 Datasheet


Isc N-Channel MOSFET Transistor TK20E60W5 ·FEATURES ·Low d TK20E60W5 Datasheet
MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60W5 1. Applicat TK20E60W5 Datasheet
Recommendation Recommendation Datasheet TK20E60W5 Datasheet




TK20E60W5
MOSFETs Silicon N-Channel MOS (DTMOS)
TK20E60W5
1. Applications
• Switching Voltage Regulators
2. Features
(1) Fast reverse recovery time: trr = 110 ns (typ.)
(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.)
by used to Super Junction Structure : DTMOS
(3) Easy to control Gate switching
(4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK20E60W5
TO-220
1: Gate
2: Drain (Heatsink)
3: Source
©2015 Toshiba Corporation
1
Start of commercial production
2015-10
2015-10-22
Rev.3.0



TK20E60W5
TK20E60W5
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Mounting torque
(Tc = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
TOR
600
±30
20
80
165
200
5
20
80
150
-55 to 150
0.6
V
A
W
mJ
A
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25(initial), L = 14 mH, RG = 25 , IAR = 5 A
Symbol
Rth(ch-c)
Rth(ch-a)
Max
0.757
83.3
Unit
/W
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2015 Toshiba Corporation
2
2015-10-22
Rev.3.0







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