DatasheetsPDF.com

13007

NPN Transistor

Description

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR NPN FEATURES Power dissipation PCM : 2 W Collector current www.DataSheet4U.com ICM: 8 A Collector-base voltage Tamb=25 V(BR)CBO : 700 V Operating and storage junction temperature range TJ Tstg: -55 to +150 TO 220 1.BASE 2.COLLECTOR 3.EMITTER...

Jiangsu Changjiang

Download 13007 Datasheet

Similar Datasheet

1300 Crystal Clock Oscillators - Nihon Dempa Kogyo
1300-102-4xx 2.54mm IDC Connector - Methode Electronics
13001 NPN Epitaxial Silicon Transistor - Elite
13001-2 NPN power transistor - Jingdao
13001-A NPN power transistor - Jingdao
13001S Low-frequency amplification environment rated bipolar transistors - ETC
13001S8D NPN Transistor - JTD
13002AG NPN SILICON TRANSISTOR - Unisonic Technologies
13002AH NPN SILICON TRANSISTOR - Unisonic Technologies
13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - STMicroelectronics

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)