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MMBF4416A Datasheet, Equivalent, RF Amplifier.N-Channel RF Amplifier N-Channel RF Amplifier |
| Part | MMBF4416A |
|---|---|
| Description | N-Channel RF Amplifier |
| Feature | RF Amplifier, N-Channel MMBF4416A
Featu res
• This Device is Designed for RF Amplifiers • Sourced from Process 50 • This is a Pb−Free and Halide Free Device ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted. ) (Notes 1, 2) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain−Gate Volt age Gate−Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 35 V −35 V 10 mA −55 to +150 _C Stresses exceedi ng those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device funct ionality should not be assumed, . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | MMBF4416A |
|---|---|
| Description | N-Channel RF Amplifier |
| Feature | RF Amplifier, N-Channel MMBF4416A
Featu res
• This Device is Designed for RF Amplifiers • Sourced from Process 50 • This is a Pb−Free and Halide Free Device ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted. ) (Notes 1, 2) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain−Gate Volt age Gate−Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 35 V −35 V 10 mA −55 to +150 _C Stresses exceedi ng those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device funct ionality should not be assumed, . |
| Manufacture | ON Semiconductor |
| Datasheet |
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