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AO8802

ETC

Dual N-Channel MOSFET


Description
August 2002 AO8802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load...



ETC

AO8802

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