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2SH12

Hitachi Semiconductor

Silicon N-Channel IGBT


Description
ADE–208–275 (Z) 2SH12 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application High speed power switching TO–220AB Features High speed switching Low on saturation voltage 1 2 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak...



Hitachi Semiconductor

2SH12

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