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2SK2380

Panasonic Semiconductor

Silicon N-Channel MOSFET


Description
Silicon Junction FETs (Small Signal) 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 0.4 unit: mm 1.6±0.15 0.8±0.1 0.4 q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magaz...



Panasonic Semiconductor

2SK2380

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