Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF630, IRF630S
FEATURES
’Trench’ technology Low on-state resistance Fast switching Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 200 V ID = 9 A
g
RDS(ON) ≤ 400 mΩ
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Tre...