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IRF7341

Part Number	IRF7341
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Apr 16, 2005
Detailed Description	PD -91703 IRF7341 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surfac...
Datasheet	IRF7341 PDF File

Overview

PD -91703 IRF7341 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 55V RDS(on) = 0.
050Ω 3 6 4 5 Top V ie w Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 ...

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