MMBF4416A RF Amplifier Datasheet

MMBF4416A Datasheet, PDF, Equivalent


Part Number

MMBF4416A

Description

N-Channel RF Amplifier

Manufacture

Fairchild

Total Page 3 Pages
Datasheet
Download MMBF4416A Datasheet


MMBF4416A
MMBF4416A
N-Channel RF Amplifier
• This device is designed for RF amplifiers.
• Sourced from process 50.
G
S
SOT-23
D Mark: 6BG
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
Parameter
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
35
-35
10
- 55 ~ 150
Units
V
V
mA
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage
IGSS
Gate Reverse Current
VGS(off) Gate Source Cut-off Voltage
VGS Gate Source Voltage
On Characteristics
VDS = 0, IG = 1.0µA
VGS = -20V, VDS = 0
VDS = 15V, ID = 1.0nA
VDS = 15V, ID = 500µA
IDSS
Zero-Gate Voltage Drain Current
VGS(f)
Gate-Source Forward Voltage
Small Signal Characteristics
VGS = 15V, VGS = 0
VDS = 0, IG = 1.0mA
gfs
gos
Ciss
Crss
Coss
NF
Forward Transfer Conductance *
Output Conductance *
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Noise Figure
* Pulse Test: Pulse Width 300ms, Duty Cycle 2%
VDS = 15V, VGS = 0, f = 1.0kHz
VDS = 15V, VGS = 0, f = 1.0kHz
VDS = 15V, VGS = 0, f = 1.0MHz
VDS = 15V, VGS = 0, f = 1.0MHz
VDS = 15V, VGS = 0, f = 1.0MHz
VDS = 15V, VGS = 0, ID = 5mA,
Rg = 1k, f = 400MHz
Min. Typ. Max. Units
-35 V
-100 pA
-2.5 -6.0 V
-1 -5.5 V
5 15 µA
1V
4500
7500
50
4.0
0.8
2.0
4.0
µmhos
µmhos
PF
PF
PF
dB
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
°PD Total Device Dissipation
Derate above 25 C
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
Max.
225
1.8
556
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002

MMBF4416A
Package Dimensions
SOT-23
0.40 ±0.03
0.40 ±0.03
2.90 ±0.10
0.96~1.14
0.03~0.10
0.38 REF
0.12
+0.05
–0.023
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A1, November 2002


Features MMBF4416A MMBF4416A N-Channel RF Amplif ier • This device is designed for RF amplifiers. • Sourced from process 50 . G S D SOT-23 Mark: 6BG Absolute Ma ximum Ratings * TA=25°C unless otherwi se noted Symbol VDG VGS IGF TJ, TSTG Pa rameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value 35 -35 10 - 55 ~ 150 Units V V mA °C * These ratings are limiting valu es above which the serviceability of an y semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 de grees C. 2) These are steady state limi ts. The factory should be consulted on applications involving pulsed or low du ty cycle operations. Electrical Charac teristics TA=25°C unless otherwise not ed Symbol Parameter Test Condition VDS = 0, IG = 1.0µA VGS = -20V, VDS = 0 VD S = 15V, ID = 1.0nA VDS = 15V, ID = 500 µA VGS = 15V, VGS = 0 VDS = 0, IG = 1. 0mA VDS = 15V, VGS = 0, f = 1.0kHz VDS = 15V, VGS = 0, f = 1.0kHz VDS = .
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