NPN Transistor. NTE2308 Datasheet

NTE2308 Transistor. Datasheet pdf. Equivalent

Part NTE2308
Description Silicon NPN Transistor
Feature NTE2308 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage .
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Datasheet
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NTE2308
NTE2308
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D High Breakdown Voltage
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pules test: Pulse Width 300µs, Duty Cycle 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
VCB = 400V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 1.6A
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
fT
VCE(sat)
VBE(sat)
VCE = 5V, IC = 8A
VCE = 10V, IC = 1.6A
IC = 8A, IB = 1.6A
IC = 8A, IB = 1.6A
Output Capacitance
Cob VCB = 10V, f = 1MHz
Min Typ Max Unit
– – 10 µA
– – 10 µA
15 –
8––
– 20 – MHz
– – 1.0 V
– – 1.5 V
– 160 – pF



NTE2308
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
CollectorEmitter Sustaining Voltage
TurnOn Time
Storage Time
Fall Time
V(BR)CBO IC = 1mA, IE = 0
V(BR)CBO IC = 10mA, RBE =
V(BR)EBO IE = 1mA, IC = 0
VCEO(sus) IC = 12A, IB = 2.4A, L = 50µH
VCEX(sus) IC = 12A, IB1 = 2.4A, L= 200µH,
IB2 = 2.4A, Clamped
IC = 3A, IB1 = 0.6A, L= 200µH,
IB2 = 0.6A, Clamped
ton VCC = 200V, IC = 10A, IB1 = 2A,
tstg IB2 = 2A, RL = 20
tf
500
400
7
400
400
450
––
––
––
V
V
V
V
V
V
1.0 µs
2.5 µs
1.0 µs
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
C
.126
(3.22)
Dia
.787
(20.0)
B CE
.215 (5.47)







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