NPN Transistor. NTE2312 Datasheet

NTE2312 Transistor. Datasheet pdf. Equivalent

Part NTE2312
Description Silicon NPN Transistor
Feature NTE2312 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2312 is a silicon.
Manufacture NTE
Datasheet
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NTE2312
NTE2312
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–
speed power switching inductive circuits where fall time is critical. This device is particularly suited
for 115V and 220V switch–mode applications such as switching regulators, inverters, motor controls,
solenoid/relay drivers, and deflection circuits.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Emitter Current, IE
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275°C
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.



NTE2312
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics (Note 2)
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
VCEO(sus) IC = 10mA, IB = 0
ICEV VCEV = 700V, VBE(off) = 1.5V
VCEV = 700V, VBE(off) = 1.5V,
TC = +100°C
IEBO VEB = 9V, Ic = 0
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
IC = 2A, VCE = 5V
IC = 5A, VCE = 5V
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
IC = 5A, IB = 1A, TC = +100°C
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 5A, IB = 1A, TC = +100°C
CurrentGain Bandwidth Product
fT
Output Capacitance
Cob
Switching Characteristics (Resistive Load)
IC = 500mA, VCE = 10V, f = 1MHz
VCB = 10V, IE = 0, f = 0.1MHz
Delay Time
Rise Time
Storage Time
td VCC = 125V, IC = 5A,
tr
IB1 = IB2 = 1A, tp = 25µs,
Duty Cycle 1%
ts
Fall Time
tf
Switching Characteristics (Inductive Load), Clamped
Voltage Storage Time
Crossover Time
tsv IC = 5A, Vclamp = 300V, IB1 = 1A,
tc VBE(off) = 5V, TC = +100°C
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
Min Typ Max Unit
400
––
––
––
V
1 mA
5 mA
1 mA
8 60
5 30
––1V
––2V
––3V
––3V
– – 1.2 V
– – 1.6 V
– – 1.5 V
4 – – MHz
110 pF
0.05 0.1 µs
0.8 1.5 µs
1.0 3.0 µs
0.15 0.7 µs
0.86 2.3 µs
0.14 0.7 µs







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