NPN Transistor. NTE2313 Datasheet

NTE2313 Transistor. Datasheet pdf. Equivalent

Part NTE2313
Description Silicon NPN Transistor
Feature NTE2313 Silicon NPN Transistor High Speed Switch Description: The NTE2313 is a high–voltage, high–sp.
Manufacture NTE
Datasheet
Download NTE2313 Datasheet




NTE2313
NTE2313
Silicon NPN Transistor
High Speed Switch
Description:
The NTE2313 is a high–voltage, high–speed, glass–passivated NPN power transistor in a TO220
type package designed for use in converters, inverters, switching regulators, motor control systems,
and switching applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Reverse Base Current, –IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Power Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275°C
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, L = 25mH
Collector Cutoff Current
Emitter Cutoff Current
ICES
IEBO
VCS = 1000V
VCS = 1000V, TC = +125°C
IC = 0, VEB = 5V
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle 2%.
Min Typ Max Unit
450 – – V
– – 0.2 mA
– – 1.5 mA
– – 1 mA



NTE2313
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain
CollectorEmitter Saturation Voltage
hFE IC = 0.1A, VCE = 5V
VCE(sat) IC = 0.3A, IB = 30mA
30 50
– – 0.8 V
BaseEmitter Saturation Voltage
Dynamic Characteristics
IC = 1A, IB = 200mA
VBE(sat) IC = 1A, IB = 0.2A
– – 1.0 V
– – 1.1 V
CurrentGain Bandwidth Product
fT IC = 500mA, VCE = 10V, f = 1MHz 4 – – MHz
Switching Characteristics
TurnOn Time
Storage Time
Fall Time
ton VCC = 250V, IC = 1A, IB1 = 0.2A,
ts IB2 = 0.4A
tf
0.3 0.5 µs
2.0 3.5 µs
0.3 µs
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab







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