NPN/PNP Transistor. NTE2320 Datasheet

NTE2320 Transistor. Datasheet pdf. Equivalent

Part NTE2320
Description Silicon NPN/PNP Transistor
Feature NTE2320 Silicon NPN/PNP Transistor Quad, General Purpose Switch, Amp (Complementary Pair) Absolute M.
Manufacture NTE
Datasheet
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NTE2320
NTE2320
Silicon NPN/PNP Transistor
Quad, General Purpose Switch, Amp
(Complementary Pair)
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C, Each Die, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.18mW/°C
Total Device Dissipation (TA = +25°C, Four Die Equal Power, Note 1), PD . . . . . . . . . . . . . . . . 1.25W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mW/°C
Total Device Dissipation (TC = +25°C, Each Die, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
Total Device Dissipation (TC = +25°C, Four Die Equal Power, Note 1), PD . . . . . . . . . . . . . . . . 3.0W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Reistance, Junction–to–Ambient, RthJA
Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193°C/W
Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Thermal Reistance, Junction–to–Case, RthJC
Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41.6°C/W
Coupling Factors, Junction–to–Ambient
Q1–Q4 or Q2–Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60%
Q1–Q2 or Q3–Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24%
Coupling Factors, Junction–to–Case
Q1–Q4 or Q2–Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30%
Q1–Q2 or Q3–Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20%
Note 1. Voltage and current are negative for PNP transistors.



NTE2320
Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
CollectorBase Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 3)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
IC = 10mA, IB = 0, Note 2
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 50V, IE = 0
VEB = 3V, IC = 0
30 – – V
60 – – V
5–– V
– – 30 nA
– – 30 nA
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Small–Signal Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 10V, IC = 1mA
VCE = 10V, IC = 10mA
VCE = 10V, IC = 150mA
VCE = 10V, IC = 300mA
IC = 150mA, IB = 15mA
IC = 300mA, IB = 30mA
IC = 150mA, IB = 15mA
IC = 300mA, IB = 30mA
50 – –
75 – –
100 – –
20 – –
– – 0.4 V
– – 01.4 V
– – 1.3 V
– – 2.0 V
Current GainBandwidth Product
fT VCE = 20V, IC = 50mA, f = 100MHz, 200 350 MHz
Note 3
Output Capacitance
NPN
PNP
Cobo
VCB = 10V, IE = 0, f = 1MHz
6.0 8.0 pF
4.5 8.0 pF
Input Capacitance
NPN
PNP
Cibo
VEB = 2V, IC = 0, f = 1MHz
20 30 pF
17 30 pF
Switching Characteristics
TurnOn Time
TurnOff Time
ton VCC = 30V, VEB = 0.5V, IC = 150mA, 30 ns
IB1 = 15mA
toff VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
225 ns
Note 1. Voltage and current are negative for PNP transistors.
Note 2. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating.
Note 3. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.







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