NPN Transistor. NTE2330 Datasheet

NTE2330 Transistor. Datasheet pdf. Equivalent

Part NTE2330
Description Silicon NPN Transistor
Feature NTE2330 Silicon NPN Transistor High Gain Amp w/Internal Zener Diode Features: D D D D Excellent Wide.
Manufacture NTE
Datasheet
Download NTE2330 Datasheet



NTE2330
NTE2330
Silicon NPN Transistor
High Gain Amp w/Internal Zener Diode
Features:
D Excellent Wide Safe Operating Area
D Included Avalanche Diode
D High DC Current Gain
D High Collector Power Dissipation Capability
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 (+15, –10) V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 (+15, –10) V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
Allowable Energy
V(BR)CBO IC = 10mA, IE = 0
V(BR)CBO IC = 100mA, IB = 0
IEBO VEB = 5V, IC = 0
hFE VCE = 5V, IC = 500mA
VCE(sat) IC = 500mA, IB = 2mA
IC = 1A, IB = 20mA
VBE VCE = 5V, IC = 500mA
ET
Min Typ Max Unit
45 55 70 V
45 55 70 V
– – 10 µA
500 1000 2500
– – 2.0 V
– – 3.0 V
0.50 0.65 0.80 V
80 –
– W.sec



NTE2330
.190 (4.82)
.787
(20.0)
.615 (15.62)
C
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B CE
.215 (5.47)







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